unisonic technologies co., ltd ut6401 power mosfet www.unisonic.com.tw 1 of 5 copyright ? 2015 unisonic technologies co., ltd qw-r502-151.d 5a, 30v p-channel enhancement mode ? description the utc ut6401 is p-channel enhancement mode power mosfet, designed with high densit y cell, with fast switching speed, low on-resistance, exce llent thermal and electrical capabilities, operation with low gate charge. this device is suitable for use as a load switch or in pwm applications. ? symbol sot-23 (sc-59) 1 2 3 sot-26 1 2 3 4 5 6 ? ordering information pin assignment ordering number package 1234 5 6 packing UT6401G-AE3-R sot-23 s g d - - - tape reel ut6401g-ag6-r sot-26 d d g s d d tape reel note: pin assignment: g: gate d: drain s: source ? marking
ut6401 power mosfet unisonic technologies co., ltd 2 of 5 www.unisonic.com.tw qw-r502-151.d ? absolute maximum ratings (t a = 25 , unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss -30 gate-source voltage v gss 12 v continuous drain current (note 3) i d -5 pulsed drain current (note 2) i dm -20 a sot-23 1.38 power dissipation sot-26 p d 2 w junction temperature t j +150 c storage temperature t stg -55 ~ +150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device operation is not implied. ? thermal data parameter symbol min typ max unit sot-23 90 junction to ambient (note 3) sot-26 ja 110 c/w ? electrical characteristics (t j =25 , unless otherwise specified) parameter symbol test conditions min typ max units off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =-250ua -30 v drain-source leakage current i dss v ds =-24v, v gs =0v -1 ua gate-source leakage current i gss v ds =0v, v gs =12v 100 na on characteristics gate threshold voltage v gs(th) v ds =v gs , i d =-250ua -0.7 -1 -1.3 v on state drain current i d(on) v ds =-5v, v gs =-4.5v -25 a v gs =-10v, i d =-5a 42 49 m ? v gs =-4.5v, i d =-4a 53 64 m ? static drain-source on-resistance (note 2) r ds(on) v gs =-2.5v, i d =-1a 81 119 m ? dynamic characteristics input capacitance c iss 943 pf output capacitance c oss 108 pf reverse transfer capacitance c rss v gs =0v,v ds =-15v,f=1.0mhz 73 pf switching characteristics turn-on delay time (note 2) t d(on) 6 ns turn-on rise time t r 3 ns turn-off delay time t d(off) 40 ns turn-off fall time t f v ds =-15v, v gs =-10v, r g =6 ? , r l =3 ? 11 ns total gate charge (note 2) q g 9.5 nc gate-source charge q gs 2.1 nc gate-drain charge q gd v ds =-15v, v gs =-4.5v, i d =-5a 2.9 nc source-drain diode ratings and characteristics drain-source diode forward voltage(note2) v sd i s =-1a, v gs =0v -0.75 -1 v maximum continuous drain-source diode forward current i s -5 a maximun body-diode pulsed current i sm -20 a notes: 1. pulse width limited by t j(max) 2. pulse width 300us, duty cycle 0.5%.
ut6401 power mosfet unisonic technologies co., ltd 3 of 5 www.unisonic.com.tw qw-r502-151.d ? typical characteristics drain current, -i d (a) drain-current, -i d (a) on-resistance, r ds(on) (m ) capacitance (pf) 25 125 0.0 0.2 0.4 0.6 0.8 1.0 1.2 source-drain voltage, -v sd (v) body-diode characteristics 1.0e+01 1.0e+00 1.0e-01 1.0e-02 1.0e-03 1.0e-04 1.0e-05 1.0e-06 source current, -i s (a) i d =-2a 125 25 190 170 150 110 130 90 70 50 30 1 0 0246810 gate-source voltage, -v gs (v) on-resistance, r ds(on) (m ) on-resistance vs. gate-source voltage
ut6401 power mosfet unisonic technologies co., ltd 4 of 5 www.unisonic.com.tw qw-r502-151.d ? typical characteristics(cont.) v ds =-15v i d =-5a 5 4 3 2 1 0 0 24681012 gate-source voltage, -v gs (v) gate charge, -q g (nc) gate-charge characteristics t j(max) =150 t a =25 40 30 20 10 0 0.001 0.01 0.1 1 10 100 1000 pulse width (s) power (w) single pulse power rating junction-to- ambient normalized transient thermal resistance,z ja drain-current, -i d (a)
ut6401 power mosfet unisonic technologies co., ltd 5 of 5 www.unisonic.com.tw qw-r502-151.d ? typical characteristics -0.2 0 0 -0.2 drain current vs. source to drain voltage drain current, i d (a) source to drain voltage,v sd (v) -0.8 -0.4 -0.6 -0.6 -0.8 -0.3 -12 0 0 -4 -8 -10 drain-source on-state resistance characteristics drain current, i d (a) drain to source voltage, v ds (v) -2 -0.2 -0.1 -6 -0.4 v gs =-10v i d =-5a -0.4 v gs =-4.5v i d =-4a -1 v gs =-2.5v i d =-1a drain current, i d (a) drain current, i dss (a) utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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